FQP6N80C
Manufacturer:
On Semiconductor
Mfr.Part #:
FQP6N80C
Datasheet:
Description:
MOSFETs TO-220AB-3 Through Hole N-Channel number of channels:1 158 W 800 V Continuous Drain Current (ID):5.5 A 30 nC
| Parameter | Value |
|---|---|
| Voltage Rating (DC) | 800 V |
| Length | 10.1 mm |
| Width | 4.7 mm |
| Termination | Through Hole |
| Max Operating Temperature | 150 °C |
| Min Operating Temperature | -55 °C |
| Number of Pins | 3 |
| Resistance | 2.5 Ω |
| Height | 9.4 mm |
| Packaging | Tube |
| RoHS | Compliant |
| REACH SVHC | No SVHC |
| Contact Plating | Tin |
| Number of Elements | 1 |
| Current Rating | 5.5 A |
| Lifecycle Status | Production (Last Updated: 2 months ago) |
| Max Power Dissipation | 158 W |
| Power Dissipation | 158 W |
| Threshold Voltage | 5 V |
| Number of Channels | 1 |
| Input capacitance | 1.31 nF |
| Continuous Drain Current (ID) | 5.5 A |
| Rds On Max | 2.5 Ω |
| Drain to Source Voltage (Vdss) | 800 V |
| FET Type(Transistor Polarity) | N-Channel |
| Turn-On Delay Time | 26 ns |
| Turn-Off Delay Time | 47 ns |
| Element Configuration | Single |
| Fall Time | 44 ns |
| Rise Time | 65 ns |
| Dual Supply Voltage | 800 V |
| Gate Charge | 30 nC |
| Drain to Source Resistance | 2.5 Ω |
| Nominal Vgs | 5 V |
| Gate to Source Voltage (Vgs) | 30 V |
| Drain to Source Breakdown Voltage (Vds) | 800 V |
| Schedule B | 8541290080 |
| Manufacturer Lifecycle Status | ACTIVE (Last Updated: 2 months ago) |
| Gate to Source Threshold Voltage | 3 V |
Stock: 7
Distributors
pcbx
pcbxUnit Price$1.80086
Ext.Price$1.80086
| Qty | Unit Price | Ext.Price |
|---|---|---|
| 1 | $1.80086 | $1.80086 |
| 10 | $1.55347 | $15.53470 |
| 25 | $1.47401 | $36.85025 |
| 50 | $1.39862 | $69.93100 |
| 100 | $1.25227 | $125.22700 |
| 300 | $1.21575 | $364.72500 |
| 500 | $1.18030 | $590.15000 |
| 1000 | $1.14838 | $1148.38000 |